Title of article :
Optoelectronic characteristics of close-packed HgTe nanoparticles in the infrared range
Author/Authors :
Kim، نويسنده , , Hyunsuk and Cho، نويسنده , , Kyoungah and Park، نويسنده , , Byungjun and Kim، نويسنده , , Jin-Hyoung and Lee، نويسنده , , Jun Woo and Kim، نويسنده , , Sangsig and Noh، نويسنده , , Taeyong and Jang، نويسنده , , Eunjoo، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2006
Pages :
5
From page :
315
To page :
319
Abstract :
Absorption, photoluminescence (PL), photoresponse, and I–V measurements were made for a close-packed HgTe nanoparticle film without organic capping materials to investigate its optoelectronic characteristics in the infrared (IR) range. In the absorption and PL spectra taken for the close-packed nanoparticle film, the wavelength of exciton peak was red-shifted, compared with 1-thioglycerol capped HgTe nanoparticles dispersed in solution. For the HgTe nanoparticle film, dark current was below several pA level, current was increased by about three orders of magnitude at a biased voltage of 3 V under the illumination, and photoresponse was very rapid compared with 1-thioglycerol capped HgTe nanoparticles. These optoelectronic characteristics illustrate that HgTe nanoparticles are one of promising materials for the photodetector in the IR range. Finally, the origin for the increase of photocurrent with increasing temperature observed in this study will be discussed.
Keywords :
D. Photocurrent , E. Photoluminesence , B. Trap-mediated hopping process , A. HgTe nanoparticles
Journal title :
Solid State Communications
Serial Year :
2006
Journal title :
Solid State Communications
Record number :
1790456
Link To Document :
بازگشت