Title of article :
Electronic band gap of SrSe at high pressure
Author/Authors :
David Atkinson، نويسنده , , Timothy and Chynoweth، نويسنده , , Katie Mae and Cervantes، نويسنده , , Phillip، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2006
Pages :
3
From page :
215
To page :
217
Abstract :
The electronic band gap of SrSe, in the CsCl-stuctured phase, was measured to 42 GPa via optical absorption studies. The indirect electronic band gap was found to close monotonically with pressure for the range of pressures studied. The change in band gap with respect to pressure, dEgap/dP, was determined to be −6.1(5)×10−3 eV/GPa. By extrapolation of our line fit, we estimate band gap closure to occur at 180(20) GPa.
Keywords :
A. Chalcogenides , D. Band structure , A. Semiconductor , E. High pressure
Journal title :
Solid State Communications
Serial Year :
2006
Journal title :
Solid State Communications
Record number :
1790935
Link To Document :
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