Effect of preheating temperature on the deposition rate of TiCN

The vaporizing process of the liquid precursors TiCl4 and CH3CN for the TiCN deposition was investigated theoretically and experimentally. Dependence of the TiCN deposition rate on preheating temperature of TiCl4 and CH3CN was observed. It was found that the TiCN deposition rate with the preheating temperature of 110 °C is less than half of the deposition rate at 50 °C. Through thermodynamic calculations, it was discovered that the TiCl4 and CH3CN vapor phases were not fully generated if the preheating temperature is too low. If the preheating temperature is too high, gas phase reactions may cause loss of Ti resulting in lower TiCN deposition rates.