Author/Authors :
W. Bencivelli، نويسنده , , W. and Bertolucci، نويسنده , , E. and Bottigli، نويسنده , , U. and Cola، نويسنده , , A. and DʹAuria، نويسنده , , S. and Fantacci، نويسنده , , M.E. and OʹShea، نويسنده , , V. and Raine، نويسنده , , C. and Rosso، نويسنده , , V. and Smith، نويسنده , , K. and Stefanini، نويسنده , , A. and Vasanelli، نويسنده , , L.، نويسنده ,
Abstract :
GaAs is a semiconductor suitable for room temperature X-ray detection but hitherto has suffered from incomplete charge collection and is affected by noise. Recent GaAs detectors made with LEC material have shown improved charge collection efficiency and energy resolution. In this paper we describe the fabrication process and present the results obtained with 80 μm thick pad detectors.
