Title of article
Monolithic silicon pixel detectors in SOI technology
Author/Authors
Marczewski، نويسنده , , J. and Caccia، نويسنده , , M. and Domanski، نويسنده , , K. and Grabiec، نويسنده , , P. and Grodner، نويسنده , , M. and Jaroszewicz، نويسنده , , B. and Klatka، نويسنده , , T. and Kociubinski، نويسنده , , A. and Koziel، نويسنده , , M. and Kucewicz، نويسنده , , W. and Kucharski، نويسنده , , K. and Kuta، نويسنده , , S. and Niemiec، نويسنده , , H. and Sapor، نويسنده , , M. and Szelezniak، نويسنده , , M. Santos Tomas، نويسنده ,
Pages
5
From page
112
To page
116
Abstract
This paper describes a monolithic silicon pixel detector for ionizing radiation manufactured using the Silicon On Insulator (SOI) technology. In this novel device, the sensor is implemented in a high resistive SOI bottom wafer while the associated CMOS read-out circuits are built in a SOI device layer. Preliminary measurements of simple test detectors are presented. They prove that the detector is working properly showing the typical sensitivity of a fully depleted Silicon detector.
Keywords
Pixel sensors , SOI detectors
Journal title
Astroparticle Physics
Record number
2026558
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