Strong elastic deformation influence on scattering mechanisms in quantum wires based on semimetals

The developed methods for obtaining monocrystal quantum wires of bismuth and its alloys in a glass coating allowed the considerable enlargement of the elastic strain region in samples of this type. This circumstance made it possible to investigate the influence of electronic topological transitions on the system properties and to observe peculiarities near the critical point of the structural phase transition. The resistance, Shubnikov-de Haas oscillations, Dingle temperature, and magnetic flux quantization effect were investigated in both ohmage region of the current-voltage characteristics and in the region of phonon generation under strong elastic strain. A complex dependence of conductivity on strain, temperature, wire diameter and impurity concentration was found. It is shown that the regions of small and high deformation are characterized by predomination of different scattering mechanisms. The problem of manifestation of interference effects manifestation in the phonon generation regime under strong elastic stretch in quantum wires based on Bi is discussed.