Author/Authors :
Tetyorkin، نويسنده , , V.V. and Sizov، نويسنده , , F.F. and Svechnikov، نويسنده , , S.V. and Golovin، نويسنده , , V.G.، نويسنده ,
Abstract :
Optical, photoelectrical and electrical properties of narrow-gap PbTePbSnTe multiple quantum wells (MQWs) were investigated. Evidence is presented that such MQSs are type I structures with the thickness of the wells d = 300–900 nm Quasi-2D behavior of the carriers was observed. Photosensitivity of the MQWs was observed up to room temperature.
