مرکز منطقه ای اطلاع رساني علوم و فناوري - Surface-treatment effects on organic thin-film transistors

Title of article :

Surface-treatment effects on organic thin-film transistors

Author/Authors :

Lim، نويسنده , , Sang Chul and Kim، نويسنده , , Seong Hyun and Lee، نويسنده , , Jung Hun and Kim، نويسنده , , Mi-Kyung and Kim، نويسنده , , Jin and Zyung، نويسنده , , Taehyoung، نويسنده ,

Issue Information :

دوماهنامه با شماره پیاپی سال 2005

Pages :

From page :

To page :

Abstract :

We have fabricated organic thin-film transistors (OTFTs) using pentacene as an active layer with chemically modified SiO2 gate dielectrics. The effects of the surface treatment of SiO2 on the electric characteristics of OTFTs were investigated. The SiO2 g

Keywords :

Organic thin-film transistors , O2-plasma treatment , HMDS treatment , OTS treatment , Semiconductors

Journal title :

Synthetic Metals

Serial Year :

2005

Journal title :

Synthetic Metals

Record number :

2081083

Link To Document :

https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=2081083