Title of article :
The effect of C60 doped interlayer for lifetime improvement of phosphorescent light emitting diodes
Author/Authors :
Lee، نويسنده , , Jun Yeob، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 2006
Pages :
4
From page :
852
To page :
855
Abstract :
The effect of C60 doped interlayer between poly(3,4-ethylenedioxythiophene:poly(styrenesulfonate) (PEDOT) and light emitting layer on the lifetime of phosphorescent organic light emitting diodes was investigated by changing the C60 content from 0% to 3%. Doping of C60 in 1,3,5-tris(N,N-bis-(4,5-methoxyphenyl)-aminophenyl)benzol (TDAPB) resulted in the increase of lifetime by more than 100% compared with lifetime of non-doped devices.
Keywords :
C60 , Doping , Lifetime
Journal title :
Synthetic Metals
Serial Year :
2006
Journal title :
Synthetic Metals
Record number :
2083408
Link To Document :
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