Evidence for amplified interband spontaneous emission in Si-based trans-column quantum dots

Si-based trans-column semiconductor quantum dots (TCQDs) are created as a new class of Si-based self-assembling nanostructures in an attempt to realize an efficient Si-based light emitter with light amplifying characteristics. A high value of quantum efficiency has been obtained for EL at low temperature, and amplified spontaneous emission of interband radiative recombination has been observed under visible, pulsed laser excitation for GaSb TCQDs embedded in Si.