Title of article :
Evidence for amplified interband spontaneous emission in Si-based trans-column quantum dots
Author/Authors :
Fukatsu، نويسنده , , S. and Jo، نويسنده , , M. M. I. Ishida، نويسنده , , K. and Yasuhara، نويسنده , , N. and Kawamoto، نويسنده , , K.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Pages :
4
From page :
683
To page :
686
Abstract :
Si-based trans-column semiconductor quantum dots (TCQDs) are created as a new class of Si-based self-assembling nanostructures in an attempt to realize an efficient Si-based light emitter with light amplifying characteristics. A high value of quantum efficiency has been obtained for EL at low temperature, and amplified spontaneous emission of interband radiative recombination has been observed under visible, pulsed laser excitation for GaSb TCQDs embedded in Si.
Keywords :
Compound Semiconductor , Amplified spontaneous emission , LED , SI , Quantum dots
Journal title :
Materials Science and Engineering C
Serial Year :
2003
Journal title :
Materials Science and Engineering C
Record number :
2098069
Link To Document :
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