• Title of article

    Study of copper aggregations at dislocations in Gaas

  • Author/Authors

    Leipner، نويسنده , , H.S. and Scholz، نويسنده , , R. and Syrowatka، نويسنده , , F. and Uniewski، نويسنده , , Rajendra H. and Schreiber، نويسنده , , J.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 1996
  • Pages
    4
  • From page
    185
  • To page
    188
  • Abstract
    In copper diffused gallium arsenide cathodoluminescence investigations were combined with analytical and transmission electron microscopy in order to interpret the occurrence of bright or dark dislocation contrasts. Various structures of Cu agglomerations were found in dependence on diffusion temperature and cooling rate. Bright dislocation contrasts are related to the enrichment of solute CuGa acceptors, whereas dark contrasts are mainly due to non-radiative recombination of Cu-As precipitates or clouds of small dislocation loops.
  • Keywords
    Dislocation , Copper , Gallium arsenide
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: B
  • Serial Year
    1996
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: B
  • Record number

    2131908