Title of article :
Modelling of SiC sublimation growth process: analyses of macrodefects formation
Author/Authors :
Chourou، نويسنده , , K and Anikin، نويسنده , , M and Bluet، نويسنده , , J.M and Dedulle، نويسنده , , J.M. and Madar، نويسنده , , R and Pons، نويسنده , , M and Blanquet، نويسنده , , E and Bernard، نويسنده , , C and Grosse، نويسنده , , P and Faure، نويسنده , , C and Basset، نويسنده , , G and Grange، نويسنده , , Y، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1999
Pages :
4
From page :
82
To page :
85
Abstract :
The influence of the temperature and its gradient on powder features and defect formation is discussed in the light of experimental results in the physical vapour transport process. The recrystallization of the source powder during crystal growth appears to be directly related to the temperature gradient field within the source material. Moreover, several calculations made on different experimental geometries of crucible show that the location of the macrodefects is strongly related to the temperature gradient in the crystal. Technical solutions in order to avoid or reduce the macrodefects formation are discussed.
Keywords :
sublimation growth , Macrodefects , Numerical simulation , heat transfer
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Serial Year :
1999
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Record number :
2134062
Link To Document :
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