Title of article :
Theoretical study of the AlxGa1−xN alloys
Author/Authors :
de Paiva، نويسنده , , R and Alves، نويسنده , , J.L.A and Nogueira، نويسنده , , R.A and de Oliveira، نويسنده , , C and Alves، نويسنده , , H.W.L and Scolfaro، نويسنده , , L.M.R. and Leite، نويسنده , , J.R، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2002
Abstract :
In this work we use a first-principles method based on the density functional theory, the full-potential linear augmented plane-wave method (FPLAPW), in order to calculate the electronic structures of the AlxGa1−xN alloys in the cubic modification. We adopt a model which allows the simulation of the composition x=0.0, 0.25, 0.50, 0.75 and 1.0. We obtain the equilibrium lattice parameters, the bulk moduli, the formation energies, the miscibility curves and the effective masses of the conduction and valence bands in the [100], [111] and [110] directions. The results can be used in the parameterization of theories based on effective hamiltonians. To our knowledge, this is the first time such a systematic ab initio study of effective masses of these semiconductor alloys is accomplished.
Keywords :
Alloys , Effective masses , GaN , ALN , AlGaN
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Journal title :
MATERIALS SCIENCE & ENGINEERING: B