Title of article
Influence of capping on strain, composition and shape of SiGe islands
Author/Authors
Hesse، نويسنده , , A. and Stangl، نويسنده , , J. and Hol، نويسنده , , V. and Bauer، نويسنده , , G. and Kirfel، نويسنده , , O. and Müller، نويسنده , , E. and Grützmacher، نويسنده , , D.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
6
From page
71
To page
76
Abstract
The rearrangement of SiGe islands during the deposition of Si was studied by a combination of scanning tunneling microscopy, transmission electron microscopy and high-resolution X-ray diffraction. With increasing silicon capping of the islands, an increasing flattening accompanied by a rising intermixing could be determined. Using a finite element calculation, which served as an input for X-ray simulations, the strain distribution within the islands was obtained.
Keywords
Scanning tunneling microscopy , Transmission electron microscopy , X-ray diffraction , Quantum dots
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2003
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2139167
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