Title of article
Obtaining of epitaxial films of metal silicides by ion implantation and molecular beam epitaxy
Author/Authors
D.A. and Umirzakov، نويسنده , , B.E. and Tashmukhamedova، نويسنده , , D.A. and Boltaev، نويسنده , , E.U. and Dzhurakhalov، نويسنده , , A.A.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
4
From page
124
To page
127
Abstract
The CoSi2, NiSi2, NaSi2 and BaSi2 thin epitaxial films have been obtained by molecular beam epitaxy and ion implantation. The growth mechanisms as well as the composition, electron and crystalline structure of these films were studied and determinate. It was shown that NiSi2, CoSi2, BaSi2 and NaSi2 epitaxial films crystallise as cubic lattice, and the bond between atoms of metal and Si has ionic-covalent nature. It was determined that the metal silicide films are heterostructure relatively Si and their width band gap make up 0.5–0.7 eV.
Keywords
Silicides of metals , Thin epitaxial films , Electron and crystalline structure , Ion implantation and molecular beam epitaxy
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2003
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2139194
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