Title of article :
A microscopic explanation for type inversion and the annealing behaviour of radiation damaged silicon detectors
Author/Authors :
Matheson، نويسنده , , J. and Robbins، نويسنده , , M. and Watts، نويسنده , , S. and Hall، نويسنده , , G. and MacEvoy، نويسنده , , B.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1996
Pages :
3
From page :
575
To page :
577
Abstract :
A semiconductor device model, DLTS measurements and defect kinetics considerations lead us to propose an explanation for the major changes in the macroscopic properties of silicon detectors caused by neutron irradiation.
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Serial Year :
1996
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Record number :
2172204
Link To Document :
https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=2172204
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