• Title of article

    Recent advances of planar silicon APD technology

  • Author/Authors

    McClish، نويسنده , , M. and Farrell، نويسنده , , R. and Myers، نويسنده , , R. and Olschner، نويسنده , , F. and Entine، نويسنده , , G. and Shah، نويسنده , , K.S.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2006
  • Pages
    5
  • From page
    36
  • To page
    40
  • Abstract
    Radiation Monitoring Devices previously reported to have fabricated, using a planar processed, deep diffused silicon avalanche photodiodes (APDs) and position sensitive APDs (PSAPDs) that can be used for direct or scintillation-based spectroscopic and imaging applications. We have developed high gain (∼1000), high quantum efficiency (40–70% in the 200–900 nm region) at unity gain, relatively low noise, and magnetically insensitive APDs up to 45 cm2 in area and PSAPDs up to 2.8×2.8 cm2 in area. These detectors have begun to be implemented in applications such as positron emission tomography (PET) and single photon emission computerized tomography (SPECT) for medical imaging, high-energy physics experiments as water Cherenkov detectors and liquefied noble gas calorimeters, and receivers for long-range optical communication at near infrared (IR) wavelengths (1064 nm). Also, our PSAPDs have been combined with photocathode structures, similar to a photomultiplier tube (PMT), to fabricate hybrid devices. Here, we present a small review and a sample of results showing various applications utilizing our planar processed APDs and PSAPDs.
  • Keywords
    Silicon , Position sensitive , APD , gamma rays , Imaging , photodetector
  • Journal title
    Nuclear Instruments and Methods in Physics Research Section A
  • Serial Year
    2006
  • Journal title
    Nuclear Instruments and Methods in Physics Research Section A
  • Record number

    2201744