Author/Authors :
ZAINAL, N. Universiti Sains Malaysia - School of Physics - Nano-optoelectronics Research and Technology, Malaysia , AZIMAH, E. Universiti Sains Malaysia - School of Physics - Nano-optoelectronics Research and Technology, Malaysia , HASSAN, Z. Universiti Sains Malaysia - School of Physics - Nano-optoelectronics Research and Technology, Malaysia , ABU HASSAN, H. Universiti Sains Malaysia - School of Physics - Nano-optoelectronics Research and Technology, Malaysia , HASHIM, M. R. Universiti Sains Malaysia - School of Physics - Nano-optoelectronics Research and Technology, Malaysia
Abstract :
In this work, the emission efficiency of In x Ga1-x N based light emitting diodes (LEDs) had been numerically investigated with the variation of the number of quantum well. From our calculation, we found that non-uniformity of carriers distribution (especially electron) in the wells leads to serious inhomogeneity of radiative recombination distribution that would degrade the efficiency of the LED with more wells. However, the problem was minimized when the selected quantum barriers were doped with a reasonable doping level. Comparison with other reported experimental works were also included. At the end of this work, we proposed several types of preferable LEDs designs with optimum structural parameters.
Keywords :
Light emitting diodes , numerical simulation , optical properties , III , V semiconductors
