Title of article :
Temperature Dependence of I-V ‎Characteristics in CNTFET Models: A ‎Comparison
Author/Authors :
Marani ، Roberto ‎Institute of Intelligent Industrial Technologies and Systems for Advanced Manufacturing ‎‎(STIIMA) - National Research Council of Italy , Perri ، Anna Gina Department of Electrical and Information Engineering, ‎Electronic Devices Laboratory - ‎Polytechnic University of Bari
From page :
33
To page :
39
Abstract :
In this paper we present a comparison of temperature dependence of I-V characteristics in Carbon Nanotube Field Effect Transistor (CNTFET) models proposed in the literature in order to identify the one more easily implementable in simulation software for electronic circuit design. At first we consider a compact, semiempirical model, already proposed by us, performing I-V characteristic simulations at different temperatures. Our results are compared with those obtained with the StanfordSource Virtual Carbon Nanotube Field-Effect Transistor model (VS-CNFET), obtaining IV characteristics comparable, but with CPU calculation times much lower.
Keywords :
CNTFET , I , V characteristics , Temperature effects
Journal title :
International Journal of Nanoscience and Nanotechnology (IJNN)
Journal title :
International Journal of Nanoscience and Nanotechnology (IJNN)
Record number :
2572262
Link To Document :
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