Author/Authors :
Ismail, Raid A. University of Technology - School of applied sciences, Iraq , Jawod, Mouslm F. University of Technology - School of applied sciences, Iraq , Kalil, Suad K. University of Baghdad - College of Education for Women - Department of Physics, Iraq
Abstract :
The rapid thermal annealing (RTA) of single crystal silicon solar cell using the radiation from a halogen lamp has been demonstrated. The electrical properties under dark and illumination conditions followed by RTA are presented. The maximum conversion efficiency and filling factor obtained after 600oC/20S RTA were 13% and 0.7 respectively.
