Author/Authors :
Mohammed, Hanaa I. University of Baghdad - College of Education Ibn Al- Haitham - Department of Physics, Iraq
Abstract :
The influence of silver doped n-type polycrystalline CdTe film with thickness of 200 nm and rate deposition of 0.3 nm.s^-1 prepared under high vacuum using thermal co-evaporation technique on its some structural and electrical properties was reported. The X- ray analysis showed that all samples are polycrystalline and have the cubic zinc blend structure with preferential orientation in the [111] direction. Films doping with impurity percentages (2, 3, and 4) %Ag lead to a significant increase in the carrier concentration, so it is found to change from 23.493 ×10^8 cm^-3 to 59.297 ×10^8 cm^-3 for pure and doped CdTe thin films with 4%Ag respectively. But films doping with impurity percentages above lead to a significant decrease in the electrical conductivity and Hall mobility, so they are found to change from 6.3 10^-7( .cm)^-1 to 1.59 10^-7( Ω.cm)^-1 , and from 16.759 ×10^2 cm^2.(V.sec)^-1 to 1.675 ×10^2 cm^2.(V.sec)^-1 respectively, for pure and doped CdTe thin films with 4%Ag. And also the doping lead to change the kind of conductivity for thin films obtain, so we found that pure CdTe thin film is n-type and then convert to p-type when thin film doped with (2, 3, and 4) %Ag.
