Title of article :
Investigation of the Effect of Recombination on Superluminescent Light-Emitting Diode Output Power Based on Nitride Pyramid Quantum Dots
Author/Authors :
Mahdizadeh Rokhi ، Mozhgan Department of Physics - Research Institute for Applied Physics and Astronomy - University of Tabriz , Asgari ، Asghar Department of Physics - Research Institute for Applied Physics and Astronomy - University of Tabriz
Abstract :
In this article, the temperature behavior of output power of superluminescent light-emitting diode (SLED) by considering the effect of non-radiative recombination coefficient, non-radiative spontaneous emission coefficient and Auger recombination coefficients has been investigated. For this aim, GaN pyramidal quantum dots were used as the active region. The numerical method has been used to solve three-dimensional Schrodinger equations and traveling-wave equations. The spectral width of the gain spectrum in each case has been investigated. Eliminating the non-radiative recombination, non-radiative spontaneous emission coefficient and Auger recombination coefficients increased the output power of SLED and in some cases reduced the negative effect of temperature increase on output power.
Keywords :
Auger recombination , GaN , gain , non , radiative spontaneous emission , output power , pyramidal quantum dot , ridge bent waveguide , Superluminscent light emitting diode.
Journal title :
International Journal of Optics and Photonics (IJOP)
Journal title :
International Journal of Optics and Photonics (IJOP)
