Charge Transport in a (pi)-Stacked Poly(dibenzofulvene) Film

Hole drift mobility of poly(dibenzofulvene) was found to be 2.7 × 10^-4 cm^2V^-1s^-1 at 299 K at a field strength of 7 × 10^5 Vcm^-1 by the time-of-flight (TOF) measurement on a cast film containing 2,4,7-trinitrofluorenylidene-9-malononitrile as an electron acceptor. This value is higher than that of main-chain (pi)-conjugating poly((pi)-phenylenevinylene) (1 × 10^-5 cm^2V^-1s^-1), is comparable to that of main-chain (sigma)-conjugating poly(methylphenylsilane) (1 × 10^-4 cm2V^-1s^-1), and is slightly lower than that of Se (10^-4 cm2V^-1s^-1 order), an inorganic semiconductor.