Title of article
Studying the mechanism of ordered growth of InAs quantum dots on GaAs/InP
Author/Authors
Wang، Xinqiang نويسنده , , Yin، Jingzhi نويسنده , , Yin، Zongyou نويسنده , , Li، Mingtao نويسنده , , Li، Zhengting نويسنده , , Du، Guotong نويسنده , , Yang، Shuren نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
-506
From page
507
To page
0
Abstract
We study the mechanism of ordered growth of InAs quantum dots (islands) on a GaAs/InP substrate in theory and point out that the tensile strain can be used to control InAs/InP selfassembled quantum dots arrangement. Photoluminescence spectrum, and atomic force microscopy images have been investigated. In the experiment, ordered InAs islands have been obtained and the maximum density of quantum dots is 1.6×1010 cm-2 at 4 monolayers InAs layer.
Keywords
Nd:Gd0.8La0.2VO4 crystal , Laser properties , Spectra
Journal title
OPTICS & LASER TECHNOLOGY
Serial Year
2001
Journal title
OPTICS & LASER TECHNOLOGY
Record number
32011
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