Title of article
Atomistic Approach to Thickness-Dependent Bandstructure Calculation of InSb UTB
Author/Authors
Guan، نويسنده , , X.، نويسنده , , Yu، نويسنده , , Z.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2007
Pages
5
From page
101
To page
105
Keywords
carrier mobility , Bandstructure , Effective mass , ultrathin body(UTB). , density of states(DOS) , indium antimonide (InSb)
Journal title
IEEE Transactions on Nanotechnology
Serial Year
2007
Journal title
IEEE Transactions on Nanotechnology
Record number
398917
Link To Document