Determination of the Recombination Parameters of the Heterostructures Based on the GaAs-AlGaAs System and Silicon Photoconverters

The results of the experimental studies on the determination of the recombination parameters of the photoconverters based on the GaAs-AIGaAs system and silicon are reported. The diffusion length of the charge minority carriers is determined by the SC spectral characteristic. The rate of the surface recombination is determined by the Is.c. dependence on the inverse value of the light absorption coeflicient and by the technique of two wavelengths. It is shown that the measured values of the diffusion length are sufficiently high and provide a large value of the quantum efficiency of the studied photoconverters. It is found that in the SC structures in the GaAs-AlGaAs system, having the n-GaAs buffer layer, the rate of the bulk recombination is much lower than in the structures of the photoconverters without the buffer layer.