Photosensitivity of the n-GaAs-p-(Ge2)0.02(ZnSe)0.03(GaAs)0.95 Structure over the Spectral Range 0.7-1.4 eV

The results of the studies of the photovoltaic properties of the epitaxial layers of the novel solid solutions (Ge2)0.02(ZnSe)0.03(GaAs)0.95 and structures based on them obtained by liquid-phase epitaxy are reported. It is shown that the energy band gap of the solid solution (GaAs)0.95(Ge2)0.02(ZnSe)0.03 assessed by the photoluminescence spectrum is - 1.51 eV at 300 K.