Title of article
Surface photoemission from Si(100) and inelastic electron mean-free-path in silicon
Author/Authors
Pi، T.-W. نويسنده , , Hong، I.-H. نويسنده , , Cheng، C.-P. نويسنده , , Wertheim، G.K. نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
-162
From page
163
To page
0
Abstract
Auger and partial photoion-yield spectra resulting from 3d photoionization or 3d-4f resonant excitation of atomic Eu have been calculated by generating the overlap of spectra with the aid of their global characteristics. The results are compared with the recently measured experimental spectra. The total Auger spectrum arising due to the Auger cascade after the 3d photoionization is presented too.
Keywords
Alkali metal adsorbates , Si(001)2×1 , Inelastic mean-free path , Synchrotron radiation photoemission , Escape depth
Journal title
JOURNAL OF ELECTRON SPECTROSCOPY & RELATED PHENOMENA
Serial Year
2000
Journal title
JOURNAL OF ELECTRON SPECTROSCOPY & RELATED PHENOMENA
Record number
48282
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