Title of article
Thermal stability of IGBT high-frequency operation
Author/Authors
B.W.، Williams, نويسنده , , S.J.، Finney, نويسنده , , K.، Sheng, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
-8
From page
9
To page
0
Abstract
Thermal stability of high-frequency insulated gate bipolar transistor (IGBT) operation is studied in this paper. The nonpunchthrough IGBT is found to be stable when operated within its rated temperature. Thermal runaway occurs with punch-through IGBTs at temperatures below the maximum junction temperature when operated at high frequency at well below rated current, with snubber or soft-switching circuits.
Journal title
IEEE Transactions on Industrial Electronics
Serial Year
2000
Journal title
IEEE Transactions on Industrial Electronics
Record number
62081
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