Very high density RF MIM capacitors (17 fF/(mu)m/sup 2/) using high-(kappa)Al/sub 2/O/sub 3/ doped Ta/sub 2/O/sub 5/ dielectrics

Using high-(kappa)Al/sub 2/O/sub 3/ doped Ta/sub 2/O/sub 5/ dielectric, we have obtained record high MIM capacitance density of 17 fF/(mu)m/sup 2/ at 100 kHz, small 5% capacitance reduction to RF frequency range, and low leakage current density of 8.9*10/sup -7/ A/cm/sup 2/. In combination of both high capacitor density and low leakage current density, a very low leakage current of 5.2*10/sup -12/ A is calculated for a typical large 10 pF capacitor used in RF IC that is even smaller than that of a deep sub-(mu)m MOSFET. This very high capacitance density with good MIM capacitor characteristics can significantly reduce the chip size of RF ICs.