Title of article
Hydrogenated microcrystalline silicon films prepared by VHF-PECVD and single junction solar cell
Author/Authors
ZHIMENG WU?، نويسنده , , QINGSONG LEI، نويسنده , , JIANPING XI، نويسنده , , YING ZHAO، نويسنده , , Xinhua Geng، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2006
Pages
4
From page
1721
To page
1724
Abstract
Intrinsic microcrystalline silicon films have been prepared with very high frequency plasma
enhanced chemical vapor deposition (VHF-PECVD) from silane/hydrogen mixture at 180◦C. The
effect of silane concentration and discharge power on the growth of silicon films was
investigated. Samples were investigated by Fourier transform infrared spectroscopy, Raman
scattering and X-ray diffraction. The Raman spectrum shows that the morphological transition
from microcrystalline to amorphous occurs under conditions of high silane concentration and
low discharge power. X-ray diffraction spectra indicate a preferential growth direction of all
microcrystalline silicon films in the (111) plane. In addition, a solar cell with an efficiency of
5.1% has been obtained with the intrinsic microcrystalline layer prepared at 10 W.
C 2006 Springer Science + Business Media, Inc.
Journal title
Journal of Materials Science
Serial Year
2006
Journal title
Journal of Materials Science
Record number
830688
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