Title of article
High-saturation-current InP-InGaAs photodiode with partially depleted absorber
Author/Authors
Li، Ning نويسنده , , Li، Xiaowei نويسنده , , Zheng، Xiaoguang نويسنده , , S.، Demiguel, نويسنده , , J.C.، Campbell, نويسنده , , D.A.، Tulchinsky, نويسنده , , K.J.، Williams, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
-1275
From page
1276
To page
0
Abstract
A high-saturation-current InGaAs photodiode (PD) with a partially depleted absorber is demonstrated. Optical responsivity of 0.58 A/W and over 1.1 W of dissipated electrical power is achieved. Small signal compression current of 110 and 57 mA is measured at radio-frequency bandwidths of 1 and 10 GHz, respectively. This continuous photocurrent is believed to be the highest reported value for a p-i-n InGaAs PD at these bandwidths.
Keywords
Technology acceptance model (TAM) , Perceived credibility , E-LEARNING
Journal title
IEEE PHOTONICS TECHNOLOGY LETTERS
Serial Year
2003
Journal title
IEEE PHOTONICS TECHNOLOGY LETTERS
Record number
85497
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