Title of article
Radiation hardness of Czochralski silicon studied by 10-MeV and 20-MeV protons
Author/Authors
E.، Tuominen, نويسنده , , J.، Harkonen, نويسنده , , E.، Tuovinen, نويسنده , , K.، Lassila-Perini, نويسنده , , P.، Luukka, نويسنده , , P.، Mehtala, نويسنده , , S.، Nummela, نويسنده , , J.، Nysten, نويسنده , , A.، Zibellini, نويسنده , , Z.، Li, نويسنده , , P.، Heikkila, نويسنده , , V.، Ovchinnikov, نويسنده , , M.، Yli-Koski, نويسنده , , P.، Laitinen, نويسنده , , A.، Pirojenko, نويسنده , , I.، Riihimaki, نويسنده , , A.، Virtanen, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
-1941
From page
1942
To page
0
Abstract
We have processed pin-diodes on Czochralski silicon (Cz-Si), standard float zone silicon (Fz-Si), and diffusion oxygenated float zone silicon (DOF) and irradiated them with 10- and 20-MeV protons. Evolutions of depletion voltage and leakage current as a function of irradiation dose were measured. Space charge sign inversion (SCSI) was investigated by an annealing study and verified by transient current technique (TCT). Czochralski silicon was found to be significantly more radiation hard than the other materials.
Keywords
Determination , Continuous , Biodegradable dissolved organic carbon , Cell immobilization , bioreactor
Journal title
IEEE Transactions on Nuclear Science
Serial Year
2003
Journal title
IEEE Transactions on Nuclear Science
Record number
86291
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