A methodology to extract the channel current of permeable gate oxide MOSFETs

A methodology to extract the channel current of MOS transistors in the presence of high gate leakage current is presented. The methodology is based on the partitioning of the gate current among the source and drain terminals and it is well suited for devices featuring ultrathin gate oxide and long channels, as those typically employed for mobility measurements. The proposed procedure is compared with the existing method based on a 50%-50% source/drain partition of the gate current, and the dependence of the extraction error associated with these two methods on channel length and bias conditions is studied in detail. It is found that the extraction error is weakly dependent on gate-source and drain-source voltages.