Title of article :
‘Stable to unstable’ transition in the (Cs, O) activation layer on GaAs (100) surfaces with negative electron affinity in extremely high vacuum
Author/Authors :
S. Pastuszka، نويسنده , , A.S. Terekhov، نويسنده , , A. Wolf، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1996
Pages :
5
From page :
361
To page :
365
Abstract :
The degradation of GaAs photocathodes with negative electron affinity, activated by (Cs, O) and (Cs, F) layers, was studied in a vacuum setup with a basic pressure below 10−12 mbar. Activation and degradation are similar for (Cs, O) and (Cs, F) activation. A new type of degradation was observed during the operation of a (Cs, O)-activated cathode, showing up as an instability after exposure to oxygen and subsequent reactivation with Cs. The same amounts of oxygen and Cs added to a (Cs, F)-activated surface did not influence its stability. A rearrangement of oxygen atoms in the activation layer is suggested as an explanation of these observations.
Journal title :
Applied Surface Science
Serial Year :
1996
Journal title :
Applied Surface Science
Record number :
990738
Link To Document :
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