The investigation of properties of silicon nitride films obtained by RPECVD from hexamethyldisilazane

The silicon nitride films were obtained by remote plasma enhance chemical vapor deposition (RPECVD) using hexamethyldisilazane or its mixture with ammonia in the range 373–773 K. The correlations between the chemical composition, deposition rates, optical, electrical and structural properties and the growth conditions were established. It was found that the formation of two polycrystalline hexagonal phases SiC and Si3N4 was realized by using pure hexamethyldisilazane as precursor. The ammonia addition in gas mixture leaded to change of the chemical composition and structure of silicon nitride films, namely, the disappearance of carbon-bonding and SiC formation, and the order of hexagonal silicon nitride.