Numerical simulation of hydrogen redistribution in thin SiO2 films under electron injection in high fields

A macroscopic transport model for the redistribution of the hydrogen profile during electrical stress as well as a transport model for electron-hole transport and accumulation of charge in SiO2 layer are proposed in this paper. The set of equations for transport model-1 consists of two diffusion equations for the free atomic and molecular hydrogen concentrations, and rate equations for the concentrations of bound hydrogen and dangling bonds. The transport model-2 consists of the rate equations for accumulation of charge on the conventional trapping centers and new trapping centers created during electrical stress, and the Poisson equation. Redistribution of hydrogen caused by hot-electron injection for the SiSiO2Al capacitor has been studied. The results are compared to the experimental data and applied for calculation of time to breakdown.