TiN growth on Si 100/ by pulsed laser deposition using homogenized KrF excimer laser beam

We report the growth of TiN thin films on Si 100.substrates by pulsed laser deposition PLD.using a homogenized KrF excimer laser beam. The TiN films were characterized by X-ray diffraction XRD., Rutherford backscattering spectroscopy RBS., and Atomic force microscope AFM.. The homogenized beam drastically decreased the number of particles incorporated into the film compared with that grown by conventional means using a non-homogenized beam. Additionally, the grown film had a strong peak with 200.preferred orientation in XRD spectra, and rocking curve measurements of XRD and RBS analysis indicated that the crystallinity was improved by the homogenized beam. q1999 Elsevier Science B.V. All rights reserved.