Bismuth-induced surface structure of Si 100/studied by scanning tunneling microscopy

We report results of a scanning tunneling microscopy investigation of the bismuth-induced structures at Si 100.surfaces. Long linear chains of bismuth dimers are formed on the Si 100.surface after bismuth deposition at 4808C. This may be self-organized by an enhanced migration of atoms along the chains. Moreover, bismuth atoms adsorbed on the surface induce, by expelling silicon atoms from the substrate surface, a 2=n.restructuring with linear defects perpendicular to the dimer rows on the Si terrace. q1999 Elsevier Science B.V. All rights reserved.