Title of article
Surface of TiO during atomic layer deposition as determined by 2 incremental dielectric reflection
Author/Authors
A. Rosental )، نويسنده , , A. Tarre، نويسنده , , P. Adamson، نويسنده , , A. Gerst، نويسنده , , A. Kasikov، نويسنده , , A. NIILISK?، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1999
Pages
6
From page
204
To page
209
Abstract
We show that the measuring of the reflectance changes in transparent systems allows one to optically characterize the
surface of films growing under the conditions of atomic partial-monolayer deposition. In the model, a continuous layer with
effective optical parameters describes the growth front. Growing amorphous TiO2thin films from TiCl4and H2O at 1158C
is used in demonstration experiments. q1999 Elsevier Science B.V. All rights reserved
Keywords
Atomic layer deposition ALDrALE. , In situ real-time reflectance measurements , TiO2 thin films
Journal title
Applied Surface Science
Serial Year
1999
Journal title
Applied Surface Science
Record number
995293
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