Title of article :
Epitaxial SrRuO thin films on LaAlO 100/ and Si 100/ 3 3
Author/Authors :
J. Rold´an، نويسنده , , F. Sa´nchez )، نويسنده , , V. Trtik 1، نويسنده , , C. Guerrero، نويسنده , , F. Benitez، نويسنده , , C. Ferrater، نويسنده , , M. Varela، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2000
Pages :
6
From page :
159
To page :
164
Abstract :
Epitaxial SrRuO3 SRO.thin films were deposited by pulsed laser deposition on LaAlO3 100.and Si 100.substrates. A study of the influence of substrate temperature and oxygen partial pressure on the structural and electrical properties is presented for films deposited on LaAlO3 100.. The dependence of the properties of SRO on film thickness was also studied. The crystal properties improved when a SrTiO3 STO.seed layer was used, although the surface of the SRO films deposited on this layer had a high density of outgrowths. SRO thin films deposited on Si 100.were epitaxial when an yttria-stabilised zirconia YSZ.buffer layer was used. The crystal structure and morphology of these films was determined. q2000 Elsevier Science B.V. All rights reserved.
Keywords :
Pulsed laser deposition , Silicon substrates , SrRuO3 , Conductive oxide , Epitaxial growth
Journal title :
Applied Surface Science
Serial Year :
2000
Journal title :
Applied Surface Science
Record number :
995911
Link To Document :
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