Title of article :
Molecular beam epitaxy of GaSb with high concentration of Mn
Author/Authors :
F. Matsukura، نويسنده , , E. Abe، نويسنده , , Y. Ohno، نويسنده , , H. Ohno، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2000
Abstract :
Molecular-beam epitaxial growth and characterization of GaSb films with high concentration of Mn several percents.are
presented. The result shows that almost all Mn atoms in GaSb forms MnSb clusters at normal growth temperature
;5608C., and that low growth temperature ;2508C.suppresses the formation of MnSb and a few tens of percent of Mn
are incorporated in the host GaSb. q2000 Elsevier Science B.V. All rights reserved
Keywords :
magnetic semiconductor , III–V compound , GaSb , MAGNETIZATION , Surface morphology , Magnetotransport
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
