Title of article
Characteristics of UHVCVD grown Si/Si1−x−yGexCy/Si quantum well heterostructure
Author/Authors
A.K. Bhaduri and S.K. Ray، نويسنده , , G.S. Kar، نويسنده , , S.K. Banerjee، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
5
From page
361
To page
365
Abstract
Single well strained-layer Si1−x−yGexCy heterostructures have been grown by ultra-high vacuum chemical vapor deposition. The effect of addition of C on strain and vibrational characteristics of Si1−xGex (y=0) layer has been studied. The results of the carrier confinement characteristics, device transconductance and optical transitions in a Si/SiGeC/Si quantum well are presented.
Keywords
Transconductance , Quantum well , Heterostructure , Chemical vapor deposition
Journal title
Applied Surface Science
Serial Year
2001
Journal title
Applied Surface Science
Record number
997372
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