Title of article
Focused ion beam sputtering investigations on SiC
Author/Authors
James L. Bischoff، نويسنده , , J. Teichert، نويسنده , , V. Heera، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
5
From page
372
To page
376
Abstract
The focused ion beam (FIB) is a very useful tool to sputter holes with well-defined dimensions which can be easily analysed by surface profiling measurements. Applying this the sputtering yields of 6H:SiC were measured for 35 and 70 keV Si, Co, Ge, Nd and Au ions from a mass separated FIB. Additionally, the sputtering yield was determined as a function of the angle of incidence and the target temperature for gold ions. The swelling due to ion implantation will be discussed.
Keywords
Focused ion beam , SiC , Swelling , Sputtering , Milling rate
Journal title
Applied Surface Science
Serial Year
2001
Journal title
Applied Surface Science
Record number
997484
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