Title of article
Silicon carbide photodiodes: Schottky and PINIP structures
Author/Authors
A. Cabrita، نويسنده , , L. Pereira، نويسنده , , D. Brida، نويسنده , , A. Lopes، نويسنده , , A. Marques، نويسنده , , I. Ferreira، نويسنده , , E. Fortunato، نويسنده , , R. Martins، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
6
From page
437
To page
442
Abstract
This work deals with the study of the role of intra-gap density of states and films composition on the colour selection of the collection spectrum of glass/ITO/a-Six:C1−x:H/Al Schottky photodiodes produced in a conventional plasma-enhanced chemical vapour deposition (PECVD) system using as gas sources silane and a controlled mixtures of silane and methane. To do so, properties of the films were investigated, especially the one concerning the determination of the valence controllability of the films produced and the density of bulk states. Besides that, a PINIP device was also produced, using the a-Six:C1−x:layer that lead to the best Schottky diode performances.
Keywords
Colour selection , Amorphous silicon carbide , Schottky junctions , Density of states
Journal title
Applied Surface Science
Serial Year
2001
Journal title
Applied Surface Science
Record number
997495
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