Pulsed laser deposition of Nd:YAG on Si with substrate bias voltage

Polycrystalline yttrium aluminum garnet (Y3Al5O12) thin films doped with neodymium have been prepared by the pulsed laser deposition (PLD) method on (1 1 1)-oriented Si wafers. Effect of external DC electrical field applied between substrate and target on the crystal quality was investigated. The growth process was carried out at a rather moderate substrate temperature of 500 °C. Obtained films were characterized by the X-ray diffraction (XRD) complete with radioluminescence spectroscopy (RLS). Intensive radioluminescence spectra of such films are reported for the first time. Laser-produced plasma plume investigations by means of time-of-flight (TOF) mass spectrometer were performed as well. Obtained results clearly indicate that the chemical composition of the plasma plume depends on the target–substrate bias voltage.