Abstract :
Secondary ion mass spectrometry (SIMS) has been utilized for many years to measure the dose of ion implants in silicon for
the purpose of verifying the ability of ion implantation equipment to accurately and reproducibly implant the desired species at
the target dose. The development of statistically and instrumentally rigorous protocols has lead to high confidence levels,
particularly with regard to accuracy and short-term repeatability. For example, high-dose, high-energy B implant dosimetry can
be targeted to within 1%. However, performing dose determination experiments using SIMS does have undesirable aspects,
such as being highly labor intensive and sample destructive.
Modern total reflection X-ray fluorescence (TXRF) instruments are equipped with capabilities for full 300 mm wafer
handling, automated data acquisition software and intense X-ray sources. These attributes enable the technique to overcome the
SIMS disadvantages listed above, as well as provide unique strengths that make it potentially highly amenable to implanter dose
matching. In this paper, we report on data collected to date that provides confidence that TXRF is an effective and economical
method to perform these measurements within certain limitations.
We have investigated a number of ion implanted species that are within the ‘‘envelope’’ of TXRF application. This envelope is
defined by a few important parameters. Species: For the anode materials used in the more common X-ray sources on the market,
each has its own set of elements that can be detected.We have investigatedWandMoX-ray sources, which are themost common in
use incommercial instrumentation.Implant energy: Ingeneral, if the energyof theimplantedspecies is too high(ormore specifically,
the distribution of the implanted species is too deep), the amount of dopant not detected by TXRF may be significant, increasing
the error of the measurement. Therefore, for each species investigated, the implant energy cannot exceed a certain level.
Dose: Logically, as the implanted dose falls below a certain point, the concentration will be below the TXRF detection limit.
In addition to the improved precision of TXRF over SIMS for dose matching, a number of other advantages will be discussed.
# 2004 Published by Elsevier B.V.
Keywords :
Ion implantation , Metrology , Dose matching , TXRF , SIMS