Title of article :
Application of TXRF for ion implanter dose matching experiments
Author/Authors :
M.R. Frost، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Pages :
4
From page :
734
To page :
737
Abstract :
Secondary ion mass spectrometry (SIMS) has been utilized for many years to measure the dose of ion implants in silicon for the purpose of verifying the ability of ion implantation equipment to accurately and reproducibly implant the desired species at the target dose. The development of statistically and instrumentally rigorous protocols has lead to high confidence levels, particularly with regard to accuracy and short-term repeatability. For example, high-dose, high-energy B implant dosimetry can be targeted to within 1%. However, performing dose determination experiments using SIMS does have undesirable aspects, such as being highly labor intensive and sample destructive. Modern total reflection X-ray fluorescence (TXRF) instruments are equipped with capabilities for full 300 mm wafer handling, automated data acquisition software and intense X-ray sources. These attributes enable the technique to overcome the SIMS disadvantages listed above, as well as provide unique strengths that make it potentially highly amenable to implanter dose matching. In this paper, we report on data collected to date that provides confidence that TXRF is an effective and economical method to perform these measurements within certain limitations. We have investigated a number of ion implanted species that are within the ‘‘envelope’’ of TXRF application. This envelope is defined by a few important parameters. Species: For the anode materials used in the more common X-ray sources on the market, each has its own set of elements that can be detected.We have investigatedWandMoX-ray sources, which are themost common in use incommercial instrumentation.Implant energy: Ingeneral, if the energyof theimplantedspecies is too high(ormore specifically, the distribution of the implanted species is too deep), the amount of dopant not detected by TXRF may be significant, increasing the error of the measurement. Therefore, for each species investigated, the implant energy cannot exceed a certain level. Dose: Logically, as the implanted dose falls below a certain point, the concentration will be below the TXRF detection limit. In addition to the improved precision of TXRF over SIMS for dose matching, a number of other advantages will be discussed. # 2004 Published by Elsevier B.V.
Keywords :
Ion implantation , Metrology , Dose matching , TXRF , SIMS
Journal title :
Applied Surface Science
Serial Year :
2004
Journal title :
Applied Surface Science
Record number :
999694
Link To Document :
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