Title of article
Fully silicided NiSi gate on La/sub 2/O/sub 3/ MOSFETs
Author/Authors
A.، Chin, نويسنده , , Zhu، Chunxiang نويسنده , , M.F.، Li, نويسنده , , Kwong، Dim-Lee نويسنده , , C.Y.، Lin, نويسنده , , M.W.، Ma, نويسنده , , Y.C.، Yeo, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
-347
From page
348
To page
0
Abstract
We have fabricated the fully silicided NiSi on La/sub 2/O/sub 3/ for n- and pMOSFETs. For 900(degree)C fully silicided CoSi/sub 2/ on La/sub 2/O/sub 3/ gate dielectric with 1.5 nm EOT, the gate dielectric has large leakage current by possible excess Co diffusion at high silicidation temperature. In sharp contrast, very low gate leakage current density of 2*10/sup -4/ A/cm/sup 2/ at 1 V is measured for 400(degree)C formed fully silicided NiSi and comparable with Al gate. The extracted work function of NiSi was 4.42 eV, and the corresponding threshold voltages are 0.12 and -0.70 V for respective n- and p-MOSFETs. Electron and hole mobilities of 156 and 44 cm/sup 2//V-s are obtained for respective n- and pMOSFETs, which are comparable with the HfO/sub 2/ MOSFETs without using H/sub 2/ annealing.
Keywords
heat transfer , natural convection , Analytical and numerical techniques
Journal title
IEEE Electron Device Letters
Serial Year
2003
Journal title
IEEE Electron Device Letters
Record number
99975
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