مرکز منطقه ای اطلاع رساني علوم و فناوري - High Aspect-Ratio Nanoscale Etching in Silicon using Electron Beam Lithography and Deep Reactive Ion Etching )DRIE( Technique

DocumentCode :

25379

Title :

High Aspect-Ratio Nanoscale Etching in Silicon using Electron Beam Lithography and Deep Reactive Ion Etching )DRIE( Technique

Author :

Ayazi Farrokh استاد راهنما

University :

Georgia Institute Of Technology

Grade :

نامعلوم

Major :

Master of Science

Number of pages :

Publish Date :

2006

Keyword :

Brand, Oliver , Frazier, Albert B.

Note :

Language :

انگليسي

Link To Document :