DocumentCode :
3282
Title :
Boron and phosphorous implantation into )100( germanium : Modeling and investigation of dopant annealing behavior
Author :
Levy Roland A. استاد راهنما , Carroll Malcolm S. استاد مشاور
University :
Van Houten Library )new Jersey Institute Of Technology(
Grade :
دكتري
Major :
Doctor of Philosophy
Number of pages :
0
Publish Date :
2004
Keyword :
Ion implantation , Pearson distribution , Dopant activation , diffusion , Germanium , Boron and phosphorous
Note :
01
Language :
انگليسي
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=17&DC=3282
