DocumentCode
3282
Title
Boron and phosphorous implantation into )100( germanium : Modeling and investigation of dopant annealing behavior
Author
Levy Roland A. استاد راهنما , Carroll Malcolm S. استاد مشاور
University
Van Houten Library )new Jersey Institute Of Technology(
Grade
دكتري
Major
Doctor of Philosophy
Number of pages
0
Publish Date
2004
Keyword
Ion implantation , Pearson distribution , Dopant activation , diffusion , Germanium , Boron and phosphorous
Note
01
Language
انگليسي
Link To Document